Efficient O-O Coupling at Catalytic Interface to Assist Kinetics Optimization on Concerted and Sequential Proton-Electron Transfer for Water Oxidation.

A catalyst kinetics optimization strategy based on tuning active site intermediates adsorption is proposed. Construction of the M-OOH on the catalytic site before the rate-determining step (RDS) is considered a central issue in the strategy, which can optimize the overall catalytic kinetics by avoiding competition from other reaction intermediates on the active site. Herein, the kinetic energy barrier of the O-O coupling for as-prepared sulfated Co-NiFe-LDH nanosheets is significantly reduced, resulting in the formation of M-OOH on the active site at low overpotential, which is directly confirmed by in situ Raman and charge transfer fitting results. Moreover, catalysts constructed from active sites of highly efficient intermediates make a reliable model for studying the mechanism of the OER in proton transfer restriction. In weakly alkaline environments, a sequential proton-electron transfer (SPET) mechanism replaces the concerted proton-electron transfer (CPET) mechanism, and the proton transfer step becomes the RDS; high-speed consumption of reaction intermediates (M-OOH) induces sulfated Co-NiFe-LDH to exhibit excellent kinetics.

Effect of Ni charge states on structural, electronic, magnetic, and optical properties of InN.

The first-principles study of Ni-doped InN has been carried out to explore the doping effect of various charge states of Ni on the structural, electronic, magnetic, and optical properties of InN using generalized gradient approximation. Structural properties like lattice parameters, aspect ratios, bond lengths, and formation energies of (In, Ni) N are used to determine the stability of each doped system. The formation energies of (In, Ni)N systems decrease with the increase in charge state of nickel, while the bond lengths show an opposite trend. The DOS diagram shows that the introduction of Ni-d states within the bang gap region reduces the band gap for Ni(1+)- and Ni(2+)-doped InN, while the isolated states are generated in the case of Ni(3+)- and Ni(4+)-doped systems. The Ni(1+)-, Ni(3+)-, and Ni(4+)-doped InN systems are ferromagnetic in nature, whereas the (In, Ni(2+))N depicts spin-glass-like behavior. The best possible magnetization is obtained for (In, Ni(4+))N with a total magnet moment of 2.42 µB per supercell. Because of the presence of nickel impurities, the optical properties of InN have been significantly improved. The pure and Ni(3+)- and Ni(4+)-doped InN systems show nearly the same values of absorption edges (∼0.56 eV), in contrast with the Ni(1+)- and Ni(2+)-doped systems, where these values are 0.37 and 0.51 eV, respectively. The shift in absorption edges of Ni(1+)- and Ni(2+)-doped InN to lower energies and increase in the intensity of absorption and broadening of absorption peaks can be attributed to the pronounced band-gap reduction for these systems. A negligible shift of absorption edges in the case of Ni(3+)- and Ni(4+)- doped InN is the characteristic of isolated charge states introduced around the Fermi level, which inhibit the band gap reduction, and hence the optical properties are not improved as expected. This study demonstrates an important fact that for best possible optical device applications Ni(1+)-doped InN system is excellent, while for better magnetic properties the (In, Ni(4+))N is more suitable.

Fabrication and electrical characterization of p-Cu2O/n-ZnO heterojunction.

The conducting metal oxide (ZnO, Cu2O) films were used for fabrication of p-n heterojunction by rf sputtering and electrodeposition techniques respectively. The as synthesized films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), UV spectroscopy and electrical techniques. The electrical properties of the p-Cu2O/n-ZnO heterojunction were examined using the current-voltage measurements. The current-voltage (I-V) result showed that potential barrier was higher than the turn-on voltage, which was attributed to the presence of the interface defect states. The PN junction parameters such as ideality factor, barrier height, and series resistance were determined using conventional forward bias current-voltage characteristics. The annealing of Cu2O increase the crystallinity size and which enhance the photo current from 1.6 mA/cm2 to 3.7 mA/cm2. The annealing of respective film resulted in a decrease of these parameters with an increase in efficiency of solar cell from 0.14% to 0.3% at 350 degrees C.

Structural, elastic constant, and vibrational properties of wurtzite gallium nitride: a first-principles approach.

Perdew-Wang proposed generalized gradient approximation (GGA) is used in conjunction with ultrasoft pseudopotential to investigate the structural, elastic constant, and vibrational properties of wurtzite GaN. The equilibrium lattice parameters, axial ratio, internal parameter, bulk modulus, and its pressure derivative are calculated. The effect of pressure on equilibrium lattice parameters, axial ratio, internal parameter (u), relative volume, and bond lengths parallel and perpendicular to the c-axis are discussed. At 52 GPa, the relative volume change is observed to be 17.8%, with an abrupt change in bond length. The calculated elastic constants are used to calculate the shear wave speeds in the [100] and [001] planes. The finite displacement method is employed to calculate phonon frequencies and the phonon density of states. The first- and second-order pressure derivative and volume dependent Gruneisen parameter (γ(j)) of zone-center phonon frequencies are discussed. These phonon calculations calculated at theoretical lattice constants agree well with existing literature.

First-principle electronic, elastic, and optical study of cubic gallium nitride.

The ab initio pseudopotential (PP) method within the generalized gradient approximation (GGA) has been used to investigate the electronic, elastic constants, and optical properties of zinc-blende GaN. An underestimated band gap along with higher DOS and squeezed energy bands around the fermi level is obtained. The d-band effect is briefly discussed for electronic band structure calculations. With the help of elastic constants, acoustic wave speeds are calculated in [100], [110], and [111] planes. The dielectric constant, refractive index, and its pressure coefficient are well illustrated. The effect of hydrostatic pressure is explicated for all these properties. The results of the present study are evaluated with the existing experimental and first-principle calculations.